high-k

This image shows the vertical fins of Intel’s revolutionary tri-gate transistors.

The Institute of Electrical and Electronics Engineers (IEEE) is awarding Intel its 2016 IEEE Corporate Innovation Award for “pioneering the use of high-k metal gate and tri-gate transistor technologies in high-volume manufacturing.” Intel was the first to design, develop and manufacture products at high-volume using high-k and tri-gate (or FinFET) technologies. These innovations made it possible to continue scaling transistors ever smaller with lower cost-per-transistor, improved performance and lower power consumption – keeping Moore’s Law going.

This image shows the vertical fins of Intel’s revolutionary tri-gate transistors.

The Institute of Electrical and Electronics Engineers (IEEE) is awarding Intel its 2016 IEEE Corporate Innovation Award for “pioneering the use of high-k metal gate and tri-gate transistor technologies in high-volume manufacturing.” Intel was the first to design, develop and manufacture products at high-volume using high-k and tri-gate (or FinFET) technologies. These innovations made it possible to continue scaling transistors ever smaller with lower cost-per-transistor, improved performance and lower power consumption – keeping Moore’s Law going.

This image shows the vertical fins of Intel’s revolutionary tri-gate transistors.

The Institute of Electrical and Electronics Engineers (IEEE) is awarding Intel its 2016 IEEE Corporate Innovation Award for “pioneering the use of high-k metal gate and tri-gate transistor technologies in high-volume manufacturing.” Intel was the first to design, develop and manufacture products at high-volume using high-k and tri-gate (or FinFET) technologies. These innovations made it possible to continue scaling transistors ever smaller with lower cost-per-transistor, improved performance and lower power consumption – keeping Moore’s Law going.

This image shows the vertical fins of Intel’s revolutionary tri-gate transistors.

The Institute of Electrical and Electronics Engineers (IEEE) is awarding Intel its 2016 IEEE Corporate Innovation Award for “pioneering the use of high-k metal gate and tri-gate transistor technologies in high-volume manufacturing.” Intel was the first to design, develop and manufacture products at high-volume using high-k and tri-gate (or FinFET) technologies. These innovations made it possible to continue scaling transistors ever smaller with lower cost-per-transistor, improved performance and lower power consumption – keeping Moore’s Law going.